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www.irf.com 1 6/13/06 IRGP4065DPBF description this igbt is specifically designed for applications in plasma display panels. this device utilizes advanced trench igbt technology to achieve low v ce(on) and low e pulse tm rating per silicon area which improve panel efficiency. additional features are 150c operating junction temperature and high repetitive peak current capability. these features combine to make this igbt a highly efficient, robust and reliable device for pdp applications. features advanced trench igbt technology optimized for sustain and energy recovery circuits in pdp applications low v ce(on) and energy per pulse (e pulse tm ) for improved panel efficiency high repetitive peak current capability lead free package
v ce min 300 v v ce(on) typ. @ i c = 70a 1.75 v i rp max @ t c = 25c 205 a t j max 150 c key parameters gc e gate collector em itter to-247ac e g n-channel c g c e c absolute maximum ratings parameter units v ge gate-to-emitter voltage v i c @ t c = 25c continuous collector current, v ge @ 15v a i c @ t c = 100c continuous collector, v ge @ 15v i rp @ t c = 25c repetitive peak current p d @t c = 25c power dissipation w p d @t c = 100c power dissipation linear derating factor w/c t j operating junction and c t stg storage temperature range soldering temperature for 10 seconds mounting torque, 6-32 or m3 screw n thermal resistance parameter typ. max. units r jc (igbt) thermal resistance junction-to-case-(each igbt) ??? 0.80 r jc (diode) thermal resistance junction-to-case-(each diode) 1.45 2.5 r cs case-to-sink (flat, greased surface) 0.24 ??? c/w r ja junction-to-ambient (typical socket mount) ??? 40 weight 6.0 (0.21) ??? g (oz) 205 300 -40 to + 150 10lb in (1.1n m) 160 63 1.3 max. 40 70 30

2 www.irf.com half sine wave with duty cycle = 0.25, ton=1sec. r is measured at
pulse width 400s; duty cycle 2%. electrical characteristics @ t j = 25c (unless otherwise specified) parameter min. typ. max. units bv ces collector-to-emitter breakdown voltage 300 ??? ??? v ? v ces / ? t j breakdown voltage temp. coefficient ??? 0.23 ??? v/c ??? 1.20 1.40 ??? 1.35 ??? ??? 1.75 2.10 v ??? 2.35 ??? ??? 2.00 ??? v ge ( th ) gate threshold voltage 2.6 ??? 5.0 v ? v ge ( th ) / ? t j gate threshold voltage coefficient ??? -11 ??? mv/c i ces collector-to-emitter leakage current ??? 2.0 25 a ??? 50 ??? i ges gate-to-emitter forward leakage ??? ??? 100 na gate-to-emitter reverse leakage ??? ??? -100 g fe forward transconductance ??? 26 ??? s q g total gate charge ??? 62 ??? nc q g c gate-to-collector charge ??? 20 ??? t d(on) turn-on delay time ? 30 ? i c = 25a, v cc = 180v t r rise time ? 26 ? ns r g = 10 ? , l=200h, l s = 150nh t d(off) turn-off delay time ? 170 ? t j = 25c t f fall time ? 160 ? t d(on) turn-on delay time ? 30 ? i c = 25a, v cc = 180v t r rise time ? 28 ? ns r g = 10 ? , l=200h, l s = 150nh t d(off) turn-off delay time ? 250 ? t j = 150c t f fall time ? 310 ? t st shoot through blocking time 100 ??? ??? ns e pulse energy per pulse j c iss input capacitance ??? 2200 ??? c oss output capacitance ??? 110 ??? pf c rss reverse transfer capacitance ??? 55 ??? l c internal collector inductance ??? 5.0 ??? between lead, nh 6mm (0.25in.) l e internal emitter inductance ??? 13 ??? from package diode characteristics @ t j = 25c (unless otherwise specified) parameter min. typ. max. units i f ( av ) average forward current at t c =155c i fsm non repetitive peak surge current ??? ??? 100 a t j = 155c, pw = 6.0ms half sine wave v f forward voltage ??? 1.0 1.25 v ??? 0.83 1.0 t rr reverse recovery time ??? ??? 35 ns ??? 27 ??? t j = 25c ??? 40 ??? t j = 125c i f = 8a q rr reverse recovery charge ??? 30 ??? nc t j = 25c di/dt = 200a/s ??? 106 ??? t j = 125c v r = 200v i rr peak recovery current ??? 2.2 ??? a t j = 25c ??? 5.3 ??? t j = 125c static collector-to-emitter voltage v ce(on) v ge = 15v, i ce = 70a, t j = 150c ??? 875 ??? v ce = v ge , i ce = 500a v ce = 300v, v ge = 0v v ce = 300v, v ge = 0v, t j = 150c ??? 975 ??? v ce = 25v, i ce = 25a v ce = 200v, i c = 25a, v ge = 15v v cc = 240v, v ge = 15v, r g = 5.1 ? v cc = 240v, r g = 5.1 ?, t j = 25c l = 220nh, c= 0.40f, v ge = 15v v cc = 240v, r g = 5.1 ?, t j = 100c and center of die contact v ge = 30v v ge = -30v ? = 1.0mhz, see fig.13 v ge = 0v l = 220nh, c= 0.40f, v ge = 15v conditions v ge = 0v, i ce = 1 ma reference to 25c, i ce = 1ma v ge = 15v, i ce = 120a v ge = 15v, i ce = 25a v ge = 15v, i ce = 70a v ge = 15v, i ce = 40a i f = 8a i f = 8a, t j = 125c i f = 1a, di/dt = -50a/s, v r =30v v ce = 30v conditions ??? ??? 8.0 a

www.irf.com 3 fig 1. typical output characteristics @ 25c fig 3. typical output characteristics @ 125c fig 4. typical output characteristics @ 150c fig 2. typical output characteristics @ 75c fig 5. typical transfer characteristics fig 6. v ce(on) vs. gate voltage 0246810121416 v ce (v) 0 40 80 120 160 200 240 280 320 360 i c e ( a ) top v ge = 18v v ge = 15v v ge = 12v v ge = 10v v ge = 8.0v bottom v ge = 6.0v 0246810121416 v ce (v) 0 40 80 120 160 200 240 280 i c e ( a ) top v ge = 18v v ge = 15v v ge = 12v v ge = 10v v ge = 8.0v bottom v ge = 6.0v 0 5 10 15 20 v ge (v) 0 5 10 15 20 v c e ( v ) t j = 25c t j = 150c i c = 25a 0246810121416 v ce (v) 0 40 80 120 160 200 i c e ( a ) top v ge = 18v v ge = 15v v ge = 12v v ge = 10v v ge = 8.0v bottom v ge = 6.0v top v ge = 18v v ge = 15v v ge = 12v v ge = 10v v ge = 8.0v bottom v ge = 6.0v 0246810121416 v ce (v) 0 40 80 120 160 200 i c e ( a ) 0 5 10 15 20 v ge , gate-to-emitter voltage (v) 0 100 200 300 400 500 600 i c e , c o l l e c t o r - t o - e m i t t e r c u r r e n t ( a ) t j = 25c t j = 150c

4 www.irf.com fig 7. maximum collector current vs. case temperature fig 8. typical repetitive peak current vs. case temperature fig 10. typical e pulse vs. collector-to-emitter voltage fig 9. typical e pulse vs. collector current fig 11. e pulse vs. temperature fig 12. forrward bias safe operating area 25 50 75 100 125 150 t j , temperature (oc) 200 400 600 800 1000 1200 1400 e n e r g y p e r p u l s e ( j ) v cc = 240v l = 220nh t = 1s half sine c= 0.4f c= 0.3f c= 0.2f 150 160 170 180 190 200 210 220 230 240 v ce, collector-to-emitter voltage (v) 200 300 400 500 600 700 800 900 1000 e n e r g y p e r p u l s e ( j ) l = 220nh c = 0.4f 100c 25c 160 170 180 190 200 210 220 230 i c , peak collector current (a) 400 500 600 700 800 900 1000 e n e r g y p e r p u l s e ( j ) v cc = 240v l = 220nh c = variable 100c 25c 1 10 100 1000 v ce (v) 1 10 100 1000 i c ( a ) operation in this area limited by v ce (on) 1msec 10sec 100sec 0 25 50 75 100 125 150 t c , case temperature (c) 0 10 20 30 40 50 60 70 80 i c , c o l l e c t o r c u r r e n t ( a ) 25 50 75 100 125 150 case temperature (c) 0 20 40 60 80 100 120 140 160 180 200 220 r e p e t i t i v e p e a k c u r r e n t ( a ) ton= 1s duty cycle = 0.25 half sine wave

www.irf.com 5 fig 15. maximum effective transient thermal impedance, junction-to-case (igbt) 1e-006 1e-005 0.0001 0.001 0.01 0.1 1 t 1 , rectangular pulse duration (sec) 0.001 0.01 0.1 1 t h e r m a l r e s p o n s e ( z t h j c ) 0.20 0.10 d = 0.50 0.02 0.01 0.05 single pulse ( thermal response ) notes: 1. duty factor d = t1/t2 2. peak tj = p dm x zthjc + tc ri (c/w) i (sec) 0.146 0.000131 0.382 0.001707 0.271 0.014532 j j 1 1 2 2 3 3 r 1 r 1 r 2 r 2 r 3 r 3 c ci i / ri ci= i / ri fig 13. typical capacitance vs. collector-to-emitter voltage fig 14. typical gate charge vs. gate-to-emitter voltage 0 50 100 150 200 250 300 v ce , collector-toemitter-voltage(v) 10 100 1000 10000 100000 c a p a c i t a n c e ( p f ) cies coes cres v gs = 0v, f = 1 mhz c ies = c ge + c gd , c ce shorted c res = c gc c oes = c ce + c gc 0 1020304050607080 q g , total gate charge (nc) 0 5 10 15 20 25 v g e , g a t e - t o - e m i t t e r v o l t a g e ( v ) i c = 25a v ce = 240v v ce = 200v v ce = 150v fig 16. maximum effective transient thermal impedance, junction-to-case (diode) 0.01 0.1 1 10 0.00001 0.0001 0.001 0.01 0.1 1 10 single pulse (thermal resistance) d = 0.50 d = 0.20 d = 0.10 d = 0.05 d = 0.02 d = 0.01 2 t 1 t p dm notes: 1. duty factor d = t1/ t2 . 2. peak tj = pdm x zthjc + tc .
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*!&" + " ,-! 10 100 1000 100 1000 if = 8a, tj = 25 ? c if = 8a, tj = 125 ? c %"&. '"*!#*'*!&" ! " ,-! 10 100 100 1000 if = 8a, tj = 25 ? c if = 8a, tj = 125 ? c fig 21a . t st and e pulse test circuit fig 21b . t st test waveforms fig 21c . e pulse test waveforms 1k vcc dut 0 l fig. 22 - gate charge circuit (turn-off) dri ver dut l c vcc rg rg b a ipulse energy v ce i c current pulse a pulse b t st fig.20 - switching loss circuit 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 v fm , forward voltage drop (v) 1 10 100 i f , i n s t a n t a n e o u s f o r w a r d c u r r e n t ( a ) tj = 125c tj = 25c

www.irf.com 7 data and specifications subject to change without notice. this product has been designed for the industrial market. qualification standards can be found on ir?s web site. ir world headquarters: 233 kansas st., el segundo, california 90245, usa tel: (310) 252-7105 tac fax: (310) 252-7903 visit us at www.irf.com for sales contact information . 06/06

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to-247ac package is not recommended for surface mount application.

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# $ year 1 = 2001 dat e code part number international logo rectifier assembly 56 57 irfpe30 135h line h i ndi cates "l ead- f r ee" we e k 35 lot code in the assembly line "h" as s embled on ww 35, 2001 note: "p" in as sembly line pos ition example: wi t h as s e mb l y this is an irfpe30 lot code 5657
note: for the most current drawings please refer to the ir website at: http://www.irf.com/package/

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